ECCN 3A001 — Electronics | Export Control Classification

Items Covered

a.General purpose integrated circuits, as follows:
- 1. Integrated circuits designed or rated as radiation hardened to withstand any of the following:
  - 1.a. A total dose of 5 × 103 Gy (Si), or higher;
  - 1.b. A dose rate upset of 5 × 106 Gy (Si)/s, or higher; or
  - 1.c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials;
- 2. "Microprocessor microcircuits," "microcomputer microcircuits," microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analog-to-digital converters, integrated circuits that contain analog-to-digital converters and store or process the digitized data, digital-to-analog converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used in unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or 'non-volatile memories,' having any of the following:
  - 2.a. Rated for operation at an ambient temperature above 398 K (+125 °C);
  - 2.b. Rated for operation at an ambient temperature below 218 K (−55 °C); or
  - 2.c. Rated for operation over the entire ambient temperature range from 218 K (−55 °C) to 398 K (+125 °C);
- 3. "Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;
- 4. [Reserved]
- 5. Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) integrated circuits, as follows:
  - 5.a. ADCs having any of the following:
    - 5.a.1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1.3 Giga Samples Per Second (GSPS);
    - 5.a.2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS);
    - 5.a.3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS;
    - 5.a.4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or
    - 5.a.5. A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS;
  - 5.b. Digital-to-Analog Converters (DAC) having any of the following:
    - 5.b.1. A resolution of 10-bit or more but less than 12-bit, with an 'adjusted update rate' of exceeding 3,500 MSPS; or
    - 5.b.2. A resolution of 12-bit or more and having any of the following:
      - 5.b.2.a. An 'adjusted update rate' exceeding 1,250 MSPS but not exceeding 3,500 MSPS, and having any of the following:
      - 5.b.2.a.1. A settling time less than 9 ns to arrive at or within 0.024% of full scale from a full scale step; or
      - 5.b.2.a.2. A 'Spurious Free Dynamic Range' (SFDR) greater than 68 dBc (carrier) when synthesizing a full scale analog signal of 100 MHz or the highest full scale analog signal frequency specified below 100 MHz; or
      - 5.b.2.b. An 'adjusted update rate' exceeding 3,500 MSPS;
a.For conventional (non-interpolating) DACs, the 'adjusted update rate' is the rate at which the digital signal is converted to an analog signal and the output analog values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC.
b.For interpolating DACs (oversampling DACs), the 'adjusted update rate' is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the 'adjusted update rate' may be referred to by different terms including:
- 6. Electro-optical and "optical integrated circuits", designed for "signal processing" and having all of the following:
  - 6.a. One or more than one internal "laser" diode;
  - 6.b. One or more than one internal light detecting element; and
  - 6.c. Optical waveguides;
- 7. 'Field programmable logic devices' having any of the following:
  - 7.a. A maximum number of single-ended digital input/outputs of greater than 700; or
  - 7.b. An 'aggregate one-way peak serial transceiver data rate' of 500 Gb/s or greater;
- 8. [Reserved]
- 9. [Reserved]
- 10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
  - 10.a. More than 1,500 terminals;
  - 10.b. A typical "basic gate propagation delay time" of less than 0.02 ns; or
  - 10.c. An operating frequency exceeding 3 GHz;
- 11. Digital integrated circuits, other than those described in 3A001.a.3 to 3A001.a.10 and 3A001.a.12, based upon any compound semiconductor and having any of the following:
  - 11.a. An equivalent gate count of more than 3,000 (2 input gates); or
  - 11.b. A toggle frequency exceeding 1.2 GHz;
- 12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N)/20,480 ms, where N is the number of points;
- 13. Direct Digital Synthesizer (DDS) integrated circuits having any of the following:
  - 13.a. A Digital-to-Analog Converter (DAC) clock frequency of 3.5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or
  - 13.b. A DAC clock frequency of 1.25 GHz or more and a DAC resolution of 12 bit or more;
- 14. Integrated circuits that perform or are programmable to perform all of the following:
  - 14.a. Analog-to-digital conversions meeting any of the following:
    - 14.a.1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1.3 Giga Samples Per Second (GSPS);
    - 14.a.2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1.0 GSPS;
    - 14.a.3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1.0 GSPS;
    - 14.a.4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or
    - 14.a.5. A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and
  - 14.b. Any of the following:
    - 14.b.1. Storage of digitized data; or
    - 14.b.2. Processing of digitized data;
b.Microwave or millimeter wave items, as follows:
- 1. "Vacuum electronic devices" and cathodes, as follows:
a.Does not exceed 31.8 GHz; and
b.Is "allocated by the ITU" for radio-communications services, but not for radio-determination.
a.An average output power equal to or less than 50 W; and
b.Designed or rated for operation in any frequency band and having all of the following:
- 1.a. Traveling-wave "vacuum electronic devices," pulsed or continuous wave, as follows:
  - 1.a.1. Devices operating at frequencies exceeding 31.8 GHz;
  - 1.a.2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds;
  - 1.a.3. Coupled cavity devices, or derivatives thereof, with a "fractional bandwidth" of more than 7% or a peak power exceeding 2.5 kW;
  - 1.a.4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following:
    - 1.a.4.a. An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5;
    - 1.a.4.b. An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1;
    - 1.a.4.c. Being "space-qualified"; or
    - 1.a.4.d. Having a gridded electron gun;
  - 1.a.5. Devices with a "fractional bandwidth" greater than or equal to 10%, with any of the following:
    - 1.a.5.a. An annular electron beam;
    - 1.a.5.b. A non-axisymmetric electron beam; or
    - 1.a.5.c. Multiple electron beams;
- 1.b. Crossed-field amplifier "vacuum electronic devices" with a gain of more than 17 dB;
- 1.c. Thermionic cathodes, designed for "vacuum electronic devices," producing an emission current density at rated operating conditions exceeding 5 A/cm2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm2;
- 1.d. "Vacuum electronic devices" with the capability to operate in a 'dual mode.'
2. "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers that any of the following:
2.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz with a "fractional bandwidth" greater than 15%, and having any of the following:
2.a.1. A peak saturated power output greater than 75 W (48.75 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz;
2.a.2. A peak saturated power output greater than 55 W (47.4 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz;
2.a.3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or
2.a.4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz;
2.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10%, and having any of the following:
2.b.1. A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz; or
2.b.2. A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8.5 GHz up to and including 16 GHz;
2.c. Rated for operation with a peak saturated power output greater than 3 W (34.77 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz, and with a "fractional bandwidth" of greater than 10%;
2.d. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz;
2.e. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz, and with a "fractional bandwidth" of greater than 10%;
2.f. Rated for operation with a peak saturated power output greater than 31.62 mW (15 dBm) at any frequency exceeding 43.5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10%;
2.g. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5%; or
2.h. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 90 GHz;
3. Discrete microwave transistors that are any of the following:
3.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz and having any of the following:
3.a.1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz;
3.a.2. A peak saturated power output greater than 205 W (53.12 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz;
3.a.3. A peak saturated power output greater than 115 W (50.61 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or
3.a.4. A peak saturated power output greater than 60 W (47.78 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz;
3.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 31.8 GHz and having any of the following:
3.b.1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz;
3.b.2. A peak saturated power output greater than 15 W (41.76 dBm) at any frequency exceeding 8.5 GHz up to and including 12 GHz;
3.b.3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or
3.b.4. A peak saturated power output greater than 7 W (38.45 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz;
3.c. Rated for operation with a peak saturated power output greater than 0.5 W (27 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz;
3.d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz;
3.e. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 43.5 GHz; or
3.f. Other than those specified by 3A001.b.3.a to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37.0 dBm) at all frequencies exceeding 8.5 GHz up to and including 31.8 GHz;
4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following:
4.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz with a "fractional bandwidth" greater than 15%, and having any of the following:
4.a.1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz;
4.a.2. A peak saturated power output greater than 270 W (54.3 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz;
4.a.3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or
4.a.4. A peak saturated power output greater than 90 W (49.54 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz;
4.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 31.8 GHz with a "fractional bandwidth" greater than 10%, and having any of the following:
4.b.1. A peak saturated power output greater than 70 W (48.45 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz;
4.b.2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8.5 GHz up to and including 12 GHz;
4.b.3. A peak saturated power output greater than 30 W (44.77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or
4.b.4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz;
4.c. Rated for operation with a peak saturated power output greater than 0.5 W (27 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz;
4.d. Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz, and with a "fractional bandwidth" of greater than 10%;
4.e. Rated for operation at frequencies exceeding 43.5 GHz and having any of the following:
4.e.1. A peak saturated power output greater than 0.2 W (23 dBm) at any frequency exceeding 43.5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10%;
4.e.2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5%; or
4.e.3. A peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 90 GHz; or
4.f. [Reserved]
5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 ms and having any of the following:
5.a. A band-pass bandwidth of more than 0.5% of center frequency; or
5.b. A band-stop bandwidth of less than 0.5% of center frequency;
6. [Reserved]
7. Converters and harmonic mixers, that are any of the following:
7.a. Designed to extend the frequency range of "signal analyzers" beyond 90 GHz;
7.b. Designed to extend the operating range of signal generators as follows:
7.b.1. Beyond 90 GHz;
7.b.2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz;
7.c. Designed to extend the operating range of network analyzers as follows:
7.c.1. Beyond 110 GHz;
7.c.2. To an output power greater than 31.62 mW (15 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz;
7.c.3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or
7.d. Designed to extend the frequency range of microwave test receivers beyond 110 GHz;
8. Microwave power amplifiers containing "vacuum electronic devices" controlled by 3A001.b.1 and having all of the following:
8.a. Operating frequencies above 3 GHz;
8.b. An average output power to mass ratio exceeding 80 W/kg; and
8.c. A volume of less than 400 cm3;
9. Microwave Power Modules (MPM) consisting of, at least, a traveling-wave "vacuum electronic device," a "Monolithic Microwave Integrated Circuit" ("MMIC") and an integrated electronic power conditioner and having all of the following:
9.a. A 'turn-on time' from off to fully operational in less than 10 seconds;
9.b. A volume less than the maximum rated power in Watts multiplied by 10 cm3/W; and
9.c. An "instantaneous bandwidth" greater than 1 octave (fmax > 2fmin) and having any of the following:
9.c.1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or
9.c.2. A frequency greater than 18 GHz;
10. Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than − (126 + 20log10F − 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz;
11. 'Frequency synthesizer' "electronic assemblies" having a "frequency switching time" as specified by any of the following:
11.a. Less than 143 ps;
11.b. Less than 100 µs for any frequency change exceeding 2.2 GHz within the synthesized frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz;
11.c. [Reserved]
11.d. Less than 500 µs for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 31.8 GHz but not exceeding 37 GHz;
11.e. Less than 100 µs for any frequency change exceeding 2.2 GHz within the synthesized frequency range exceeding 37 GHz but not exceeding 75 GHz;
11.f. Less than 100 µs for any frequency change exceeding 5.0 GHz within the synthesized frequency range exceeding 75 GHz but not exceeding 90 GHz; or
11.g. Less than 1 ms within the synthesized frequency range exceeding 90 GHz;
12. 'Transmit/receive modules, 'transmit/receive MMICs, 'transmit modules,' and 'transmit MMICs,' rated for operation at frequencies above 2.7 GHz and having all of the following:
12.a. A peak saturated power output (in watts), Psat, greater than 505.62 divided by the maximum operating frequency (in GHz) squared [Psat>505.62 W*GHz2/fGHz2] for any channel;
12.b. A "fractional bandwidth" of 5% or greater for any channel;
12.c. Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm*GHz*N/fGHz] where N is the number of transmit or transmit/receive channels; and
12.d. An electronically variable phase shifter per channel;
c.Acoustic wave devices as follows and "specially designed" "components" therefor:
- 1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:
  - 1.a. A carrier frequency exceeding 6 GHz;
  - 1.b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:
    - 1.b.1. A 'frequency side-lobe rejection' exceeding 65 dB;
    - 1.b.2. A product of the maximum delay time and the bandwidth (time in µs and bandwidth in MHz) of more than 100;
    - 1.b.3. A bandwidth greater than 250 MHz; or
    - 1.b.4. A dispersive delay of more than 10 µs; or
  - 1.c. A carrier frequency of 1 GHz or less and having any of the following:
    - 1.c.1. A product of the maximum delay time and the bandwidth (time in µs and bandwidth in MHz) of more than 100;
    - 1.c.2. A dispersive delay of more than 10 µs; or
    - 1.c.3. A 'frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz;
- 2. Bulk (volume) acoustic wave devices that permit the direct processing of signals at frequencies exceeding 6 GHz;
- 3. Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves that permit the direct processing of signals or images, including spectral analysis, correlation or convolution;
d.Electronic devices and circuits containing "components," manufactured from "superconductive" materials, "specially designed" for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:
- 1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10−14 J; or
- 2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000;
e.High energy devices as follows:
- 1. 'Cells' as follows:
e.1.a 'Primary cells' having any of the following at 20 °C:
- 1.a.1. 'Energy density' exceeding 550 Wh/kg and a 'continuous power density' exceeding 50 W/kg; or
- 1.a.2. 'Energy density' exceeding 50 Wh/kg and a 'continuous power density' exceeding 350 W/kg;
1.b. 'Secondary cells' having an 'energy density' exceeding 350 Wh/kg at 20 °C;
2. High energy storage capacitors as follows:
2.a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:
2.a.1. A voltage rating equal to or more than 5 kV;
2.a.2. An energy density equal to or more than 250 J/kg; and
2.a.3. A total energy equal to or more than 25 kJ;
2.b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:
2.b.1. A voltage rating equal to or more than 5 kV;
2.b.2. An energy density equal to or more than 50 J/kg;
2.b.3. A total energy equal to or more than 100 J; and
2.b.4. A charge/discharge cycle life equal to or more than 10,000;
3. "Superconductive" electromagnets and solenoids, "specially designed" to be fully charged or discharged in less than one second and having all of the following:
3.a. Energy delivered during the discharge exceeding 10 kJ in the first second;
3.b. Inner diameter of the current carrying windings of more than 250 mm; and
3.c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm2;
4. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified," having a minimum average efficiency exceeding 20% at an operating temperature of 301 K (28 °C) under simulated 'AM0' illumination with an irradiance of 1,367 Watts per square meter (W/m2);
f.Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1.0 second of arc and "specially designed" encoder rings, discs or scales therefor;
g.Solid-state pulsed power switching thyristor devices and 'thyristor modules', using either electrically, optically, or electron radiation controlled switch methods and having any of the following:
- 1. A maximum turn-on current rate of rise (di/dt) greater than 30,000 A/µs and off-state voltage greater than 1,100 V; or
- 2. A maximum turn-on current rate of rise (di/dt) greater than 2,000 A/µs and having all of the following:
  - 2.a. An off-state peak voltage equal to or greater than 3,000 V; and
  - 2.b. A peak (surge) current equal to or greater than 3,000 A;
h.Solid-state power semiconductor switches, diodes, or 'modules', having all of the following:
- 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C);
- 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and
- 3. Continuous current greater than 1 A.
i.Intensity, amplitude, or phase electro-optic modulators, designed for analog signals and having any of the following:
- 1. A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
  - 1.a. A 'half-wave voltage' ('Vπ') less than 2.7 V when measured at a frequency of 1 GHz or below; or
  - 1.b. A 'Vπ' of less than 4 V when measured at a frequency of more than 1 GHz; or
- 2. A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
  - 2.a. A 'Vπ' less than 3.3 V when measured at a frequency of 1 GHz or below; or
  - 2.b. A 'Vπ' less than 5 V when measured at a frequency of more than 1 GHz.
j.through y. [Reserved]
z.Any commodity described in 3A001 that meets or exceeds the performance parameters in 3A090, as follows:
z.1.a "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers described in 3A001.b.2 and discrete microwave transistors in 3A001.b.3 that also meet or exceed the performance parameters in ECCN 3A090.a, except those 3A001.b.2 and b.3 items being exported or reexported for use in civil telecommunications applications;
z.1.b "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers described in 3A001.b.2 and discrete microwave transistors in 3A001.b.3 that also meet or exceed the performance parameters in ECCN 3A090.b, except those 3A001.b.2 and b.3 items being exported or reexported for use in civil telecommunications applications;
z.2.a Commodities that are described in 3A001.a.1.a when usable in "missiles" that also meet or exceed the performance parameters in ECCN 3A090.a; and to 3A001.a.5.a when "designed or modified" for military use, hermetically sealed and rated for operation in the temperature range from below −54 °C to above +125 °C and that also meet or exceed the performance parameters in ECCN 3A090.a;
z.2.b Commodities that are described in 3A001.a.1.a when usable in "missiles" that also meet or exceed the performance parameters in ECCN 3A090.b; and to 3A001.a.5.a when "designed or modified" for military use, hermetically sealed and rated for operation in the temperature range from below −54 °C to above +125 °C and that also meet or exceed the performance parameters in ECCN 3A090.b;
- 3.a. Pulse discharge capacitors described in 3A001.e.2 and superconducting solenoidal electromagnets in 3A001.e.3 that meet or exceed the technical parameters in 3A201.a and 3A201.b, respectively and that also meet or exceed the performance parameters in ECCN 3A090.a;
z.3.b Pulse discharge capacitors described in 3A001.e.2 and superconducting solenoidal electromagnets in 3A001.e.3 that meet or exceed the technical parameters in 3A201.a and 3A201.b, respectively and that also meet or exceed the performance parameters in ECCN 3A090.b;
- 4.a. All other commodities specified in this ECCN that meet or exceed the performance parameters of ECCN 3A090.a; or
z.4.b All other commodities specified in this ECCN that meet or exceed the performance parameters of ECCN 3A090.b.

Control Reasons Explained

This ECCN is controlled for the following reasons. Each reason maps to a column on the Commerce Country Chart, which determines whether a license is required for a given destination.

NSNational Security: Items that could contribute to the military potential of countries of concern. Check the Commerce Country Chart column for NS to determine license requirements.
RSRegional Stability: Items that could destabilize regions through conventional-arms build-up. Review RS columns on the Commerce Country Chart.
MTMissile Technology: Items controlled under the Missile Technology Control Regime (MTCR). Applies to items that could be used in missile development.
NPNuclear Nonproliferation: Items relevant to nuclear weapons development or delivery systems. Additional scrutiny applies under 10 CFR Part 810 and NRC regulations.
ATAnti-Terrorism: Basic anti-terrorism controls that apply to most items on the CCL. A license is required for exports to countries designated as state sponsors of terrorism.

Common Questions About 3A001

What does ECCN 3A001 cover?

ECCN 3A001 is an entry on the Commerce Control List (Electronics). The List of Items Controlled below describes the products, software, or technology captured by this classification. Compare your item against those parameters when self-classifying.

How do license requirements work for this ECCN?

License need depends on the control reasons shown for this code (for example NS, RS, MT, AT), the destination country, and how your transaction maps against the Commerce Country Chart, de minimis, and other EAR provisions. This page is a research aid only. Confirm against the current rule text and your specific facts before exporting.

Where is the official text for this ECCN?

The legal text appears in Supplement No. 1 to part 774 of the Export Administration Regulations (15 CFR Part 774). Use the official BIS link on this page to open the current supplement entry for this ECCN.

What if my product matches more than one ECCN?

When several ECCNs appear to fit, the controlling entry is usually the one that is most specific to your item's form, function, or technical limits. Cross-references in the List of Items Controlled and related ECCNs listed on this page are common starting points for narrowing the choice.

How often should I re-check this classification?

The Commerce Control List changes when BIS publishes new or amended rules. Revisit the official entry when regulations update, when the product's technical parameters change, or when the destination, end-user, or end-use of a transaction changes.

What do the control reason codes mean?

Each control reason (NS, RS, MT, AT, etc.) maps to a column on the Commerce Country Chart in Supplement No. 1 to part 738 of the EAR. When a control reason applies to your ECCN and the destination country has an X in that column, a license is generally required unless an exception applies. See the Control Reasons Explained section on this page for details on each code.

ECCN Lookup 3A001

Items Covered

Control Reasons Explained

Common Questions About 3A001

Not sure if your product matches 3A001?