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ECCN Lookup 3B001

  • NS
  • RS
  • AT

Equipment for the manufacturing of semiconductor devices, materials, or related equipment, as follows (see List of Items Controlled) and "specially designed" "components" and "accessories" therefor.

Category:
3 — Electronics
Product Group:
B — Test, Inspection & Production Equipment
Last updated:
2026-05-04

Items Covered

  • a.Equipment designed for epitaxial growth as follows:
    • 1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ±2.5% across a distance of 75 mm or more;
    • 2. Metal Organic Chemical Vapor Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminum, gallium, indium, arsenic, phosphorus, antimony, oxygen, or nitrogen;
    • 3. Molecular beam epitaxial growth equipment using gas or solid sources;
    • 4. Equipment designed for epitaxial growth of silicon (Si) or silicon germanium (SiGe), and having all of the following:
      • 4.a. At least one preclean chamber designed to provide a surface preparation means to clean the surface of the wafer; and
      • 4.b. An epitaxial deposition chamber designed to operate at a temperature equal to or below 958 K (685 °C).
  • b.Semiconductor wafer fabrication equipment designed for ion implantation and having any of the following:
    • 1. [Reserved]
    • 2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium, or helium implant;
    • 3. Direct write capability;
    • 4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or
    • 5. Being designed and optimized to operate at beam energy of 20 keV or more and a beam current of 10mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater;
  • c.Etch equipment.
    • 1. Equipment designed for dry etching as follows:
      • 1.a. Equipment designed or modified for isotropic dry etching, having a largest 'silicon germanium-to-silicon (SiGe:Si) etch selectivity' of greater than or equal to 100:1; or
      • 1.b. [Reserved]
      • 1.c. Equipment designed or modified for anisotropic dry etching, having all of the following;
        • 1.c.1. Radio Frequency (RF) power source(s) with at least one pulsed RF output;
        • 1.c.2. One or more fast gas switching valve(s) with switching time less than 300 milliseconds; and
        • 1.c.3. Electrostatic chuck with twenty or more individually controllable variable temperature elements;
    • 2. Equipment designed for wet chemical processing and having a largest 'silicon germanium-to-silicon (SiGe:Si) etch selectivity' of greater than or equal to 100:1;
    • 3. Equipment designed for anisotropic dry etching having all of following:
  • c.3.a Two or more RF independent sources;
  • c.3.b Two or more independent gas sources;
  • c.3.c 'Process uniformity tuning' for wafer thickness variation compensation; and
  • c.3.d Through Silicon Via (TSV) reveal Endpoint Detection (EPD);
    • 4. Equipment designed for Through Silicon Via (TSV) etch having all of the following:
      • 4.a. Silicon etch rate greater than 7 microns per minute;
      • 4.b. Within wafer (WIW) etch depth non-uniformity of less than or equal 2 percent; and
      • 4.c. A Through Silicon Via (TSV) aspect ratio greater than or equal to 10:1.
  • d.Semiconductor manufacturing deposition equipment, as follows:
    • 1. Equipment designed for cobalt (Co) electroplating or cobalt electroless-plating deposition processes;
    • 2. Equipment designed for:
      • 2.a. Chemical vapor deposition of cobalt (Co) fill metal; or
      • 2.b. Selective bottom-up chemical vapor deposition of tungsten (W) fill metal;
    • 3. Semiconductor manufacturing equipment designed to fabricate a metal contact by multistep processing within a single chamber by performing all of the following:
      • 3.a. Deposition of a tungsten layer, using an organometallic compound, while maintaining the wafer substrate temperature greater than 100 °C and less than 500 °C; and
      • 3.b. Surface treatment plasma process using hydrogen (H2), hydrogen and nitrogen (H2+N2), or ammonia (NH3).
    • 4. Equipment or systems designed for multistep processing in multiple chambers or stations, as follows:
      • 4.a. Equipment designed to fabricate a metal contact by performing all of the following processes:
        • 4.a.1. Surface treatment plasma process using hydrogen (H2), including hydrogen and nitrogen (H2 + N2) or ammonia (NH3), while maintaining the wafer substrate at a temperature greater than 100 °C and less than 500 °C;
        • 4.a.2. Surface treatment plasma process using oxygen (O2) or ozone (O3), while maintaining the wafer substrate at a temperature greater than 40 °C and less than 500 °C; and
        • 4.a.3. Deposition of a tungsten (W) layer while maintaining the wafer substrate temperature greater than 100 °C and less than 500 °C;
      • 4.b. Equipment designed to fabricate a metal contact by performing all of the following processes:
  • d.4.b.1 Surface treatment process using a remote plasma generator and an ion filter; and
    • 4.b.2. Deposition of a cobalt (Co) layer selectively onto copper (Cu) using an organometallic compound;
  • 4.c. Equipment designed to fabricate a metal contact by performing all the following processes:
  • 4.c.1. Deposition of a titanium nitride (TiN) or tungsten carbide (WC) layer, using an organometallic compound, while maintaining the wafer substrate at a temperature greater than 20 °C and less than 500 °C;
  • 4.c.2. Deposition of a cobalt (Co) layer using a physical sputter deposition technique and having a process pressure greater than 133.3 mPa and less than 13.33 Pa, while maintaining the wafer substrate at a temperature below 500 °C; and
  • 4.c.3. Deposition of a cobalt (Co) layer using an organometallic compound and having a process pressure greater than 133.3 Pa and less than 13.33 kPa, while maintaining the wafer substrate at a temperature greater than 20 °C and less than 500 °C;
  • 4.d. Equipment designed to fabricate copper (Cu) interconnects by performing all of the following processes:
  • 4.d.1. Deposition of a cobalt (Co) or ruthenium (Ru) layer using an organometallic compound and having a process pressure greater than 133.3 Pa and less than 13.33 kPa, while maintaining the wafer substrate at a temperature greater than 20 °C and less than 500 °C; and
  • 4.d.2. Deposition of a copper layer using a physical vapor deposition technique and having a process pressure greater than 133.3 mPa and less than 13.33 Pa, while maintaining the wafer substrate at a temperature below 500 °C;
  • 5. Equipment designed for plasma enhanced chemical vapor deposition of carbon hard masks more than 2 um thick and with density of greater than 1.7g/cc;
  • 6. Atomic Layer Deposition (ALD) equipment designed for area selective deposition of a barrier or liner using an organometallic compound;
  • 7. Equipment designed for Atomic Layer Deposition (ALD) of tungsten (W) to fill an entire interconnect or in a channel less than 40 nm wide, while maintaining the wafer substrate at a temperature less than 500 °C.
  • 8. Equipment designed for Atomic Layer Deposition (ALD) of 'work function metal' having all of the following:
  • 8.a. More than one metal source of which one is designed for an aluminum (Al) precursor;
  • 8.b. Precursor vessel designed and enabled to operate at a temperature greater than 30 °C; and
  • 8.c. Designed for depositing a 'work function metal' having all of the following:
  • 8.c.1. Deposition of titanium-aluminum carbide (TiAlC); and
  • 8.c.2. Enabling a work function greater than 4.0 eV;
  • 9. Spatial Atomic Layer Deposition (ALD) equipment having a wafer support platform that rotates around an axis having any of the following:
  • 9.a. A spatial plasma enhanced atomic layer deposition mode of operation;
  • 9.b. A plasma source; or
  • 9.c. A plasma shield or means to confine the plasma to the plasma exposure process region;
  • 10. Equipment designed for Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) of plasma enhanced of low fluorine tungsten (FW) (fluorine (F) concentration less than 1019 atoms/cm3) films;
  • 11. [Reserved]
  • 12. Equipment designed for depositing a metal layer, and having any of the following:
  • 12.a. Selective tungsten (W) growth without a barrier; or
  • 12.b. Selective molybdenum (Mo) growth without a barrier;
  • 13. Equipment designed for depositing a ruthenium layer (Ru) using an organometallic compound, while maintaining the wafer substrate at a temperature greater than 20 °C and less than 500 °C;
  • 14. Equipment designed for deposition assisted by remotely generated 'radicals', enabling the fabrication of a silicon (Si) and carbon (C) containing film, and having all of the following properties of the deposited film:
  • 14.a. A dielectric constant (k) of less than 4.4;
  • 14.b. In features with an aspect ratio greater than 5:1 with lateral openings of less than 35 nm; and
  • 14.c. A feature-to-feature pitch of less than 45 nm;
  • 15. Equipment designed for void free plasma enhanced deposition of a low-k dielectric layer in gaps between metal lines less than 25 nm and having an aspect ratio greater than or equal to 1:1 with a less than 3.3 dielectric constant;
  • 16. [Reserved]
  • 17. Equipment designed for plasma enhanced chemical vapor deposition (PECVD) or radical assisted chemical vapor deposition and UV curing in a single platform of a dielectric film, while maintaining a substrate temperature below 500 °C, having all of the following:
  • 17.a. A thickness of more than 6 nm and less than 20 nm on metal features having less than 24 nm pitch and having an aspect ratio equal to or greater than 1:1.8; and
  • 17.b. A dielectric constant less than 3.0;
  • 18. Equipment designed or modified for Atomic Layer Deposition (ALD) of molybdenum (Mo), ruthenium (Ru), or combinations Mo or Ru, and having all of the following:
  • 18.a. A metal precursor source designed or modified to operate at a temperature greater 75 °C; and
  • 18.b. A process chamber (module) using a reducing agent containing hydrogen (H) at a pressure greater than or equal to 30 Torr (4 kPa).
  • 19. Deposition equipment having direct-liquid injection of more than two metal precursors, designed or modified to deposit a conformal dielectric film with a dielectric constant (K) greater than 40 in features with aspect ratio greater than 200:1 in a single deposition chamber.
  • 20. Physical vapor deposition equipment having electromagnets for ion flux guidance, and "specially designed" to deposit tungsten (W) metal into features having an aspect ratio of 3:1 or greater.
  • e.Automatic loading multi-chamber central wafer handling systems having all of the following:
    • 1. Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' controlled by 3B001.a, .b., .c, and .d are designed to be connected; and
    • 2. Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';
  • f.Lithography commodities as follows:
    • 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
      • 1.a. A light source wavelength shorter than 193 nm; or
      • 1.b. A light source wavelength equal to or longer than 193 nm and having all of the following:
        • 1.b.1. The capability to produce a pattern with a "Minimum Resolvable Feature size" (MRF) of 45 nm or less; and
        • 1.b.2. A maximum 'dedicated chuck overlay' value of less than or equal to 1.50 nm;
    • 2. Imprint lithography equipment capable of production features of 45 nm or less;
    • 3. Equipment "specially designed" for mask making having all of the following:
      • 3.a. A deflected focused electron beam, ion beam or "laser" beam; and
      • 3.b. Having any of the following:
        • 3.b.1. A Full-Width Half-Maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or
        • 3.b.2. [Reserved]
        • 3.b.3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;
    • 4. Equipment designed for device processing using direct writing methods, having all of the following:
      • 4.a. A deflected focused electron beam; and
      • 4.b. Having any of the following:
        • 4.b.1. A minimum beam size equal to or smaller than 15 nm; or
        • 4.b.2. An overlay error less than 27 nm (mean + 3 sigma);
    • 5. Imprint lithography equipment having an overlay accuracy less (better) than 1.5;
    • 6. Commodities not specified by 3B001.f.1, designed or modified to perform all of the following in or with deep-ultraviolet immersion photolithography equipment:
      • 6.a. Decrease the minimum resolvable feature specified by 3B001.f.1.b; and
      • 6.b. Decrease the maximum 'dedicated chuck overlay' of a deep-ultraviolet immersion lithography tool below or equal to 1.5 nm.
  • g.Masks and reticles, designed for integrated circuits controlled by 3A001;
  • h.Multi-layer masks with a phase shift layer not specified by 3B001.g and designed to be used by lithography equipment having a light source wavelength less than 245 nm;
  • i.Imprint lithography templates designed for integrated circuits by 3A001;
  • j.Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:
    • 1. "Specially designed" for "Extreme Ultraviolet" ("EUV") lithography; and
    • 2. Compliant with SEMI Standard P37;
  • k.Equipment designed for ion beam deposition or physical vapor deposition of a multi-layer reflector for "EUV" masks;
  • l."EUV" pellicles;
  • m.Equipment for manufacturing "EUV" pellicles;
  • n.Equipment designed for coating, depositing, baking, or developing photoresist formulated for "EUV" lithography;
  • o.[Reserved]
  • p.Removal and cleaning equipment as follows:
    • 1. [Reserved]
    • 2. Single wafer wet cleaning equipment with surface modification drying; or
    • 3. [Reserved]
    • 4. Equipment designed for single wafer cleaning using supercritical CO2 or sublimation drying;
  • q."EUV" masks and "EUV" reticles, designed for integrated circuits, not specified by 3B001.g, and having a mask "substrate blank" specified by 3B001.j; or
  • r.Equipment designed for EUV 'pattern shaping.'

Control Reasons Explained

This ECCN is controlled for the following reasons. Each reason maps to a column on the Commerce Country Chart, which determines whether a license is required for a given destination.

NSNational Security
Items that could contribute to the military potential of countries of concern. Check the Commerce Country Chart column for NS to determine license requirements.
RSRegional Stability
Items that could destabilize regions through conventional-arms build-up. Review RS columns on the Commerce Country Chart.
ATAnti-Terrorism
Basic anti-terrorism controls that apply to most items on the CCL. A license is required for exports to countries designated as state sponsors of terrorism.

Common Questions About 3B001

What does ECCN 3B001 cover?
ECCN 3B001 is an entry on the Commerce Control List (Electronics). The List of Items Controlled below describes the products, software, or technology captured by this classification. Compare your item against those parameters when self-classifying.
How do license requirements work for this ECCN?
License need depends on the control reasons shown for this code (for example NS, RS, MT, AT), the destination country, and how your transaction maps against the Commerce Country Chart, de minimis, and other EAR provisions. This page is a research aid only. Confirm against the current rule text and your specific facts before exporting.
Where is the official text for this ECCN?
The legal text appears in Supplement No. 1 to part 774 of the Export Administration Regulations (15 CFR Part 774). Use the official BIS link on this page to open the current supplement entry for this ECCN.
What if my product matches more than one ECCN?
When several ECCNs appear to fit, the controlling entry is usually the one that is most specific to your item's form, function, or technical limits. Cross-references in the List of Items Controlled and related ECCNs listed on this page are common starting points for narrowing the choice.
How often should I re-check this classification?
The Commerce Control List changes when BIS publishes new or amended rules. Revisit the official entry when regulations update, when the product's technical parameters change, or when the destination, end-user, or end-use of a transaction changes.
What do the control reason codes mean?
Each control reason (NS, RS, MT, AT, etc.) maps to a column on the Commerce Country Chart in Supplement No. 1 to part 738 of the EAR. When a control reason applies to your ECCN and the destination country has an X in that column, a license is generally required unless an exception applies. See the Control Reasons Explained section on this page for details on each code.

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